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Ordering number:EN3871 NPN Epitaxial Planar Silicon Transistor 2SC4727 20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. · It is possible to make appliances more compact because its height on board is
Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification 4.0±0.2 3.0±0.2 Unit: mm s Features q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. (
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power
High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 1) Very low output-on resistance (Ron). 2) Low capacitance. Dimensions (Unit : mm) 2SC4774 2.0 0.3 (3) 0.9 0.2 0.7 1.25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Co
2SC4797 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (
2SC4796 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (
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