2SC4702
Hitachi Semiconductor
Silicon NPN Epitaxial2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ.
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4702
Absolute Maximum Ratings (Ta = 25°C)
Item Collec
2SC4702
Renesas
Silicon NPN Epitaxial2SC4702
Silicon NPN Epitaxial
REJ03G0729-0300 (Previous ADE-208-1120A) Rev.3.00 Aug.10.2005
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ.
Outline
RENESAS Package code: PLSP0003ZB-A (Packa
2SC4702
Kexin
Silicon NPN EpitaxialSMD Type
Silicon NPN Epitaxial 2SC4702
SOT-23
Transistors
Unit: mm
Features
High breakdown voltage
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Small Cob
1 2
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
VCEO = 300 V
Cob = 1.5 pF Typ.
0.55
0.4
3
+0.05 0.1-0.01