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SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Large current calcity (IC=2A) +0.2 9.70 -0.2 High blocking voltage(VCEO 400V) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127
SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High DC current gain. +0.2 9.70 -0.2 Low collector saturation voltage. High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2
Ordering number:EN3399C Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1773 : PNP Eppitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor 2SA1773/2SC4616 High-Voltage Driver Applications Package Dimensions unit:mm 2045A [
2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation
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