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Datasheet 2SC454 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | 2SC454 | Silicon NPN Epitaxial 2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
2SC454
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power diss |
 Hitachi Semiconductor |
 |
| 25 | 2SC454 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
|
 Micro Electronics |
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| 24 | 2SC4540 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications Power Switching Applications
2SC4540
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package
• PC = 1.0 |
 Toshiba Semiconductor |
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| 23 | 2SC4540 | Power Switching Applications SMD Type
Power Switching Applications 2SC4540
Transistors
Features
Low Saturation Voltage: VCE(sat) = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1735
Absolute Maximum Ratings Ta = 25
Par |
 Kexin |
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