2SC4455 전자부품 데이터시트

SMD Type Silicon NPN Triple Diffused Type 2SC4497 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low saturation voltage. Small collector output capacitance. +0.1 1.3-0.1 High voltage. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applicatio

Ordering number:EN3098 NPN Triple Diffused Planar Silicon Transistor 2SC4492 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process). · Intended for high-density mounting (Suitable for sets whose h

SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collec

SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4412 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 High breakdown voltage. Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). Excellent DC current gain ratio(hFE