2SC4213
Kexin
Silicon NPN EpitaxialSMD Type
Silicon NPN Epitaxial 2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small pack
2SC4213
Toshiba Semiconductor
Silicon NPN Epitaxial Type TRANSISTORTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low