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2SC4213 전자부품 데이터시트



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2SC4213  

Kexin
Kexin

2SC4213

Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small pack



2SC4213  

Toshiba Semiconductor
Toshiba Semiconductor

2SC4213

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low



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