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SMD Type NPN Silicon Epitaxia 2SC4178 Transistors IC Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity. High voltage and current. Complementary to 2SA1611. Small package. Production specification 2SC4177W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORM
RoHS 2SC4177 2SC4177 DFEATURES TRANSISTOR (NPN ) TPower dissipation .,LPCM: 0.15 W (Tamb=25℃) 1. 01 REF 0. 30 2. 00¡ À0. 05 Collector current OICM: 0.1 A Collector-base voltage CV(BR)CBO: 60 V 1. 30¡ À0. 03 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150
Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • Power supplies, relay derivers, lamp drivers Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacit
2SC4177 TRANSISTOR (NPN) FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Volta
SMD Type High-Voltage Switching Applications 2SC4135 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127
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