2SC4113 전자부품 데이터시트

SMD Type High-Voltage Switching Applications 2SC4135 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127

SMD Type High-Voltage Switching Applications 2SC4134 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127

SMD Type NPN Silicon Epitaxia 2SC4178 Transistors IC Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNI

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity. High voltage and current. Complementary to 2SA1611. Small package. Production specification 2SC4177W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORM

RoHS 2SC4177 2SC4177 DFEATURES TRANSISTOR (NPN ) TPower dissipation .,LPCM: 0.15 W (Tamb=25℃) 1. 01 REF 0. 30 2. 00¡ À0. 05 Collector current OICM: 0.1 A Collector-base voltage CV(BR)CBO: 60 V 1. 30¡ À0. 03 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150