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Datasheet 2SC3871 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC3871 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3871
DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching
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APPLICATIONS ·Designed |
 Inchange Semiconductor |
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| 1 | 2SC3871 | Silicon NPN triple diffusion planar type Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe ope |
 Panasonic Semiconductor |
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