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Datasheet 2SC3838K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2SC3838K | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC3838K
2SC3838K TRANSISTOR (NPN)
FEATURES
TDPower dissipation
.,LPCM:
0.15 W (Tamb=25℃)
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
Collector current
ICM: 0.05 A
Collector-base voltage
OV(BR)CBO:
20 V
1. 9
Operating and storage junction temperature range
CTJ, Tstg: -55℃ t |
WEJ |
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3 | 2SC3838K | Silicon NPN transistor 2SC3838K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
特征频率高,低噪声系数。 High fT, small NF.
用途 / Applications
用于高频放大电路。 High frequency |
BLUE ROCKET ELECTRONICS |
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2 | 2SC3838K | High-Frequency Amplifier Transistor |
ROHM Semiconductor |
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1 | 2SC3838K | High-Frequency Amplifier Transistor SMD Type
Transistors
High-Frequency Amplifier Transistor 2SC3838K
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
High transition frequency. (Typ. fT= 1.5GHz) Small rbb'.Cc and high gain. (Typ. 4ps)
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0. |
Kexin |
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Número de pieza | Descripción | Fabricantes | |
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