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Datasheet 2SC3669 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC3669 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1429
Abso |
 Toshiba Semiconductor |
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| 1 | 2SC3669 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage VCE(SAT)=0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number
Lead Free
Halo |
 Unisonic Technologies |
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