2SC3659
Inchange Semiconductor
Silicon NPN Power TransistorsINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3659
DESCRIPTION ·High Breakdown Voltage: VCES= 1700V (Min) ·Built-in Damper Didoe
APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUT