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2SC3647 전자부품 데이터시트



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2SC3647  

ON Semiconductor
ON Semiconductor

2SC3647

Bipolar Transistor

Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed �



2SC3647  

Unisonic Technologies
Unisonic Technologies

2SC3647

HIGH-VOLTAGE SWITCHING APPLICATIONS

UNISONIC TECHNOLOGIES CO., 2SC3647 HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES NPN EPITAXIAL SILICON TRANSISTOR * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy t



2SC3647  

Sanyo Semicon Device
Sanyo Semicon Device

2SC3647

PNP / NPN Epitaxial Planar Silicon Transistor

Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large



2SC3647  

Kexin
Kexin

2SC3647

Transistor

SMD Type High-Voltage Switching Applications 2SC3647 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-



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