2SC3647
ON Semiconductor
Bipolar TransistorOrdering number : EN2006D
2SA1417/2SC3647
Bipolar Transistor
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed �
2SC3647
Unisonic Technologies
HIGH-VOLTAGE SWITCHING APPLICATIONSUNISONIC TECHNOLOGIES CO.,
2SC3647
HIGH-VOLTAGE SWITCHING APPLICATIONS
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy t
2SC3647
Sanyo Semicon Device
PNP / NPN Epitaxial Planar Silicon TransistorOrdering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large
2SC3647
Kexin
TransistorSMD Type
High-Voltage Switching Applications 2SC3647
Transistors
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-