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Datasheet 2SC3585 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3585 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3585
DESCRIPTION ·Low Noise and High Gain
NF = 1.8 dB TYP. @f = 2.0 GHz Ga = 9 dB TYP. @f = 2.0 GHz
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM |
 Inchange Semiconductor |
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| 2 | 2SC3585 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power g |
 NEC |
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| 1 | 2SC3585 | NPN Silicon Epitaxial Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC3585
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.c |
 Kexin |
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