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SMD Type Silicon NPN Epitaxial Planar Type 2SC3547B SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Transition frequency is high and dependent on current excellently. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base
SMD Type Silicon NPN Epitaxial Planar Type 2SC3547A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features Transition frequency is high and dependent on current excellently. +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Bas
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3547A DESCRIPTION ·High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
2SC3545 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 特征频率高,集电极到基极时间常数小,反向传输电容小。 High fT, low CC.rb,b, low feedback capacitance
SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high volt
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