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2SC3425 전자부품 데이터시트



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2SC3425  

Toshiba Semiconductor
Toshiba Semiconductor

2SC3425

TRANSISTOR SILICON NPN DIFFUSED TYPE (PCT PROCESS)





관련 부품 2SC34 상세설명

2SC3448  

  
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3448 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applicat



Inchange Semiconductor
Inchange Semiconductor

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2SC3446  

  
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applicat



Inchange Semiconductor
Inchange Semiconductor

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2SC3440-HF  

  
NPN Transistors

SMD Type Transistors NPN Transistors 2SC3440-HF ■ Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward current gain. ● Super mini package for easy mounting. ● High collector current. ● Complementary to 2SA1365-HF ● Pb−Free Package May be Avai



Kexin
Kexin

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2SC3465  

  
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3465 DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified ou



SavantIC
SavantIC

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2SC3439  

  
Small Signal Transistor

SMD Type Small Signal Transistor 2SC3439 Transistors Features High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base volt



Kexin
Kexin

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2SC3462  

  
Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3462 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE M



Inchange Semiconductor
Inchange Semiconductor

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