2SC3076
Kexin
Silicon NPN EpitaxialSMD Type
Silicon NPN Epitaxial 2SC3076
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.)
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.3
2SC3076
Toshiba Semiconductor
Silicon NPN Epitaxial Type TRANSISTORTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0