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2SC3076 전자부품 데이터시트



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2SC3076  

Kexin
Kexin

2SC3076

Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.3



2SC3076  

Toshiba Semiconductor
Toshiba Semiconductor

2SC3076

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0



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