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Datasheet 2SC2982 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2982 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications Medium Power Amplifier Applications
2SC2982
Unit: mm
• High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A |
 Toshiba Semiconductor |
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| 2 | 2SC2982 | Medium Power Amplifier Applications SMD Type
Medium Power Amplifier Applications 2SC2982
Transistors
Features
Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
 Kexin |
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| 1 | 2SC2982 | Transistor SMD Type
Product specification
2SC2982
Features
Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) C |
 TY Semiconductor |
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