2SC2873
SeCoS
NPN Silicon Epitaxial Planar Transistor2SC2873
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES z Low saturation voltage z High speed switching time z Complementary to 2SA1213 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCE
2SC2873
Kexin
Silicon PNP Epitaxial TypeSMD Type
Silicon PNP Epitaxial Type 2SC2873
Transistors
Features
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ.).
Absolute Maximum Ratings Ta = 25
Parameter Col
2SC2873
Jin Yu Semiconductor
TRANSISTOR2SC2873
TRANSISTOR (NPN)
FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching
SOT- 89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIM
2SC2873
Toshiba Semiconductor
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)2SC2873
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2873
Power Amplifier Applications Power Switching Applications
• • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ
2SC2873-O
MCC
NPN Silicon Epitaxial TransistorsMCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
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2SC2873-O 2SC2873-Y
NPN Silicon Epitaxial Transistors
C
1. Base 2.
2SC2873-Y
MCC
NPN Silicon Epitaxial TransistorsMCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
2SC2873-O 2SC2873-Y
NPN Silicon Epitaxial Transistors
C
1. Base 2.