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Datasheet 2SC2716 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2716 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2716
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
2SC2716
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
C |
 Toshiba Semiconductor |
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| 2 | 2SC2716 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC2716
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Low noise figure: NF = 3.5dB (max) (f = 1 MHz).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolut |
 Kexin |
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| 1 | 2SC2716 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2716
DESCRIPTION ·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability
APPLICATIONS ·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
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 Inchange Semiconductor |
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