2SC2712
Unisonic Technologies
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTORUNISONIC TECHNOLOGIES CO., LTD 2SC2712
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
3
NPN SILICON TRANSIST
2SC2712
Rectron
BIPOLAR TRANSISTORSTECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
RECTRON
2SC2712
FEATURES
* Power dissipation PCM : 150 mW(Tamb=25OC) * Collector current ICM : 150 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction
2SC2712
WEJ
NPN EPITAXIAL SILICON TRANSISTORNPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER
High Current Gain Bandwidth Product fT=600MHz
2SC2715
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
Unit:mm
ABSOLUTE MAXIMUM RATINGS
Characte
2SC2712
SeCoS
NPN Silicon General Purpose Transistor2SC2712
Elektronische Bauelemente
NPN Silicon General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES
*Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Opera
2SC2712
HOTTECH
NPN TransistorPlastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162
2SC2712 (NPN)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector
2SC2712
Galaxy Semi-Conductor
Silicon Epitaxial Planar TransistorBL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z z z Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity.
Production specification
2SC2712
Pb
Lead-free
APPLICATIONS
z Audio
2SC2712
Toshiba Semiconductor
Silicon NPN Epitaxial Type TRANSISTORTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
2SC2712
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hF
2SC2712
Kexin
Silicon NPN Epitaxial Type TransistorSMD Type
Silicon NPN Epitaxial Type Transistor 2SC2712
SOT-23
Transistors
Unit: mm
Features
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
Low noise: NF = 1dB (typ.), 1