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2SC2712  

Unisonic Technologies
Unisonic Technologies

2SC2712

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise 3 NPN SILICON TRANSIST



2SC2712  

Rectron
Rectron

2SC2712

BIPOLAR TRANSISTORS

TECHNICAL SPECIFICATION SEMICONDUCTOR SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) RECTRON 2SC2712 FEATURES * Power dissipation PCM : 150 mW(Tamb=25OC) * Collector current ICM : 150 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction



2SC2712  

WEJ
WEJ

2SC2712

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 Unit:mm ABSOLUTE MAXIMUM RATINGS Characte



2SC2712  

SeCoS
SeCoS

2SC2712

NPN Silicon General Purpose Transistor

2SC2712 Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Opera



2SC2712  

HOTTECH
HOTTECH

2SC2712

NPN Transistor

Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector



2SC2712  

Galaxy Semi-Conductor
Galaxy Semi-Conductor

2SC2712

Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. Production specification 2SC2712 Pb Lead-free APPLICATIONS z Audio



2SC2712  

Toshiba Semiconductor
Toshiba Semiconductor

2SC2712

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hF



2SC2712  

Kexin
Kexin

2SC2712

Silicon NPN Epitaxial Type Transistor

SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Transistors Unit: mm Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 1



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