|
|
Datasheet 2SC2669 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SC2669 | TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) 2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collecto |
Toshiba Semiconductor |
2SC2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SC2719 | Transistors |
NEC Electronics |
|
2SC2625 | POWER TRANSISTORS(10A/400V/80W) |
Mospec Semiconductor |
|
2SC2625 | Silicon NPN Power Transistors |
Inchange Semiconductor |
Esta página es del resultado de búsqueda del 2SC2669. Si pulsa el resultado de búsqueda de 2SC2669 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |