2SC2655
Weitron
NPN General Purpose Transistors2SC2655
NPN General Purpose Transistors
P b Lead(Pb)-Free
2 3 1.EMITTER 3.BASE 2.COLLECTOR 1
TO-92MOD
ELECTRICAL CHARACTERISTICS£¨
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-o
2SC2655
SeCoS
NPN Plastic Encapsulated Transistor2SC2655
Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92MOD
A D
Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) High speed switchi
2SC2655
Unisonic Technologies
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONSUNISONIC TECHNOLOGIES CO., LTD 2SC2655
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.)
NPN SILICON TRANSISTOR
1 TO-92NL
*Pb-free plating product n
2SC2655
Toshiba Semiconductor
Silicon NPN Epitaxial Type TRANSISTOR2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power d