2SC2290
Toshiba Semiconductor
Silicon NPN Epitaxial Planar Type TransistorTOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
l Specified 12.5V, 28MHz Characteristics
l Output Power
: Po = 60WPEP (Min.)
l Power Gain
: Gp = 11.8dB (Min.)
2SC2290
HGSemi
Silicon NPN POWER TRANSISTORHG Semiconductors
HG RF POWER TRANSISTOR
2SC2290
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulat
2SC2290A
Toshiba Semiconductor
SSB LINEAR POWER AMPLIFIER APPLICATIONS2SC2290A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60W