|
|
2SC1972 전자부품 데이터시트
|
|
2SC1972 전자부품 회로 및
기능 검색 결과
2SC1972
Mitsubishi Electric Semiconductor
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
2SC1972
ASI
NPN SILICON RF POWER TRANSISTOR
2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
• • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements
2SC1972
Eleflow
silicon NPN epitaxial planar type transistor
2SC1972
Description
The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
2SC1972
HGSemi
Silicon NPN POWER TRANSISTOR
HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC1972
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
|
|
| 사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |