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TIGER ELECTRONIC CO.,LTD 2SC1959 NPN EPITAXIAL PLANAR TRANSISTOR Description The 2SC1959 is designed for audio frequency Low power amplifier applications. Features • Excellent hFE Linearity. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .................................
ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pi
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR (NPN) TO-92 FEATURES z Excellent hFE Linearlity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emit
Elektronische Bauelemente 2SC1959 0.5A, 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent hFE Linearity High Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SC1959-O hFE(1) Range hFE(2) 70~140 2
2SC1959 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 极好的 hFE 特性,可得 1W 输出,与 2SA562TM 互补。 Excellent hFE linearity1Watt output amplifier applications, comp
DC COMPONENTS CO., LTD. R 2SC1959 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2
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