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Datasheet 2SC1881K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC1881K | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SC1881K
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max)@ I |
 Inchange Semiconductor |
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| 1 | 2SC1881K | Silicon NPN Triple Diffused 2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6.8 kΩ (Typ)
400 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter |
 Hitachi Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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