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2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.
FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V Plastic-Encapsulate Transistors 2SC1623 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Te
Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High DC current gain: hFE=200TYP. High voltage: VCEO=50V. Power dissipation.(PC=200mW) Production specification 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. ORDERING INFORMATION Type N
DC COMPONENTS CO., LTD. R 2SC1623 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65)
SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC current gain. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Rating
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PartNumber.co.kr | 2020 | 연락처 |