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2SC1623K 전자부품 데이터시트



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2SC1623K  

SeCoS
SeCoS

2SC1623K

NPN Epitaxial Planar Transistor

2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free DESCRIPTION The 2SC1623K is designed for use in driver stage of AF amplifier and general purpose applic




관련 부품 2SC162 상세설명

2SC1623F  

  
NPN Epitaxial Planar Transistor

2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.



SeCoS
SeCoS

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2SC1623  

  
NPN Transistor

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V Plastic-Encapsulate Transistors 2SC1623 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Te



HOTTECH
HOTTECH

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2SC1623  

  
Plastic-Encapsulate Transistors

Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector



TRANSYS
TRANSYS

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2SC1623W  

  
NPN Silicon Epitaxial Planar Transistor

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High DC current gain: hFE=200TYP. High voltage: VCEO=50V. Power dissipation.(PC=200mW) Production specification 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier. ORDERING INFORMATION Type N



Galaxy Semi-Conductor
Galaxy Semi-Conductor

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2SC1623  

  
NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2SC1623 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65)



Dc Components
Dc Components

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2SC1622A  

  
NPN Silicon Epitaxial Transistor

SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC current gain. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Rating



Kexin
Kexin

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