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SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High voltage VCEO : 160V +0.1 1.3-0.1 High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-
Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector
2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free DESCRIPTION The 2SC1623K is designed for use in driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS Base 3 Colle
2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.
FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V Plastic-Encapsulate Transistors 2SC1623 (NPN) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Te
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA) z High voltage. Production specification 2SC1654 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC165
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