2SB974
Inchange Semiconductor
Silicon PNP Darlington Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB974
DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type
2SB974
SavantIC
SILICON POWER TRANSISTORSavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB974
DESCRIPTION ·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification