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Datasheet 2SB935 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SB935 | Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiatin |
 Panasonic Semiconductor |
 |
| 5 | 2SB935 | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB935
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max |
 Kexin |
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| 4 | 2SB935 | Transistor Product specification
2SB935
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60- |
 TY Semiconductor |
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| 3 | 2SB935A | Silicon PNP epitaxial planar type(For low-voltage switching) Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiatin |
Panasonic Semiconductor |
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