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Datasheet 2SB930 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SB930 | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collect |
 Panasonic Semiconductor |
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| 4 | 2SB930 | Transistor Product specification
2SB930
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.6 |
 TY Semiconductor |
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| 3 | 2SB930A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collect |
Panasonic Semiconductor |
|
| 2 | 2SB930A | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB930A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
Low collector-emitter saturation voltage |
 Kexin |
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