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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2SB881 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A ·Complement to Type 2SD
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB880 DESCRIPTION ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD1190 APPLICATIONS ·Motor drivers,printer hammer drivers,relay dr
SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB815 SOT-23 Unit: mm Features Ultrasmall package allows miniaturization in end products. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 Large current capacity (IC=0.7A) and low-saturation voltage. 1 +0.1 0.95-0.1 +0.1 1.9-
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 · DESCRIPTION ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector;con
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector;con
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