2SB867 전자부품 데이터시트

SavantIC Semiconductor Product Specification Silicon PNP Power Transistor 2SB884 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1194 APPLICATIONS ·For motor drivers,printer hammer drivers,rela

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB815 SOT-23 Unit: mm Features Ultrasmall package allows miniaturization in end products. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 Large current capacity (IC=0.7A) and low-saturation voltage. 1 +0.1 0.95-0.1 +0.1 1.9-

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 · DESCRIPTION ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type 2SD1133/1134 APPLICATIONS ¡¤Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ¡¤

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2SB881 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A ·Complement to Type 2SD

DC COMPONENTS CO., LTD. R 2SB857 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ