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2SB630  

INCHANGE
INCHANGE

2SB630

Silicon PNP Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB630 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 APPLICATIONS ·Audio frequency power amplifier applications. ·Sui




관련 부품 2SB6 상세설명

2SB695  

  
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB695 · DESCRIPTION With TO-3PN package ·Wide area of safe operation APPLICATIONS ·For power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base E



SavantIC
SavantIC

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2SB689  

  
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB689 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For low frequency power amplifier, TV vertical deflection ouptut applications PINNIN



SavantIC
SavantIC

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2SB624-HF  

  
PNP Transistors

SMD Type PNP Transistors 2SB624-HF Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596-HF. ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.9



Kexin
Kexin

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2SB674  

  
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB674 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications ·Hammer dr



SavantIC
SavantIC

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2SB624  

  
SILICON PNP TRANSISTOR

2SB624(3CG624) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频放大。 Purpose: Audio frequency amplifier application . 特点:高 hFE,与 2SD596(3DG596M)互补。 Features: High hFE, complementary pair with 2SD596(3DG596M). 极限参数/Absolute Maximum Ratings(Ta=25℃)



LZG
LZG

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2SB624  

  
PNP Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596. SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symb



JCET
JCET

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