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Datasheet 2SB171 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SB171 | (2SB170 - 2SB175) Ge PNP Alloy Junction |
 ETC |
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| 3 | 2SB1710 | PNP Middle Power Transistor 2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat)≦-350mV at IC=-500mA /IB= -25mA
lOutline
TSMT3
SOT-346T
SC-96
lInne |
 ROHM Semiconductor |
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| 2 | 2SB1713 | Bipolar transistor 2SB1713
Transistors
-3A / -12V Bipolar transistor
2SB1713
zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA)
(1)Bas |
ROHM Semiconductor |
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| 1 | 2SB1714 | Bipolar transistor 2SB1714
Transistors
-2A / -30V Bipolar transistor
2SB1714
zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE( sat) ≤ -370mV, at IC = -1.5A, IB = -75mA) |
ROHM Semiconductor |
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