2SB1531
Panasonic
Power TransistorsPower Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2340
Unit: mm
15.0±0.5 13.0±0.5 4.5±0.2
M Di ain sc te on na tin nc ue e/ d
4.0±0.1
s Features
q q q
10.5±0.5
4.0±0.1
2.0±0.1
Param
2SB1531
Inchange Semiconductor
Silicon PNP Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1531
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340
A
2SB1531
Matsushita Electric
TransistorsPlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie
Power Transistors
2SB1531
Silicon PNP e