|
2SB1440 Elektronische Bauelemente -2 A, -50 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification Complements to 2SD2185
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition
SMD Type Silicon PNP Epitaxial Planar Type 2SB1440 Transistors Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 P
SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Transistors IC Features Super miniature package. High DC current IC(DC)=500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter volta
SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |