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Datasheet 2SB1409 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SB1409 | Silicon PNP Epitaxial 2SB1409(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1409(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage |
 Hitachi Semiconductor |
 |
| 3 | 2SB1409L | Silicon PNP Epitaxial 2SB1409(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1409(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage |
Hitachi Semiconductor |
|
| 2 | 2SB1409S | Silicon PNP Epitaxial 2SB1409(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1409(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage |
Hitachi Semiconductor |
|
| 1 | 2SB1409S | Silicon NPN Triple Diffused Type Transistor SMD Type
Transistors
Silicon NPN Triple Diffused Type Transistor 2SB1409S
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 |
 Kexin |
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