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Datasheet 2SB1386 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SB1386 | Low Frequency Transistor(-20V/-5A) Transistors
Low Frequency Transistor (*20V,*5A)
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type |
 ROHM Semiconductor |
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| 6 | 2SB1386 | Epitaxial Planar Transistor PNP Silicon 2SB1386
Epitaxial Planar Transistor PNP Silicon
1
BASE COLLECTOR
3 1 2
EMITTER
3
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc
THERMA |
 Weitron Technology |
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| 5 | 2SB1386 | LOW FREQUENCY PNP TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1386
LOW FREQUENCY PNP TRANSISTOR
1
PNP SILICON TRANSISTOR
FEATURES
* Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)
SOT-89
*Pb-free plating product number: 2SB1386L
ORDERING INFORMATION
Order Number |
 Unisonic Technologies |
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| 4 | 2SB1386 | SOT-89 Plastic-Encapsulate Transistors WILLAS
S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+ 2SB1386 THRU
FM1200-M+
Pb Free Product
Features
TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses)
design, excellent power dissipation offer leakage current and thermal resistance.
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 WILLAS |
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