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2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-
SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suff
MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Features • • • • • • • Lead Free Finish/RoHS Compliant ("P" Suff
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction
Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The s
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