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Datasheet 2SB1260 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SB1260 | Power Transistor 2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/R |
 ROHM Semiconductor |
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| 2 | 2SB1260 | PNP Plastic-Encapsulate Transistor 2SB1260
PNP Plastic-Encapsulate Transistor
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature |
 Weitron Technology |
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| 1 | 2SB1260 | POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SB1260
POWER TRANSISTOR
PNP SILICON TRANSISTOR
1
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.
SOT-89
FEATURES
*High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT)
1 TO-252
*Pb-free |
 Unisonic Technologies |
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