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Datasheet 2SB1198K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SB1198K | Silicon PNP transistor 2SB1198K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
击穿电压高，饱和压降低,与 2SD1782K 互补。 High breakdown, low VCE(sat),complements the 2SD1782K.
用途 |
 BLUE ROCKET ELECTRONICS |
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| 6 | 2SB1198K | PNP Transistor 2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
Features
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter C |
 DXC |
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| 5 | 2SB1198K | PNP Transistors SMD Type
Transistors
PNP Transistors 2SB1198K
■ Features
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.6 -0.1
0.55 0.4
Unit: mm 0.15 +0 |
 Kexin |
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| 4 | 2SB1198K | SILICON PNP TRANSISTOR 2SB1198K(3CG1198K)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途：用于一般中功率放大。
Purpose: Medium power amplifier applications.
特点:击穿电压高，饱和压降低,与 2SD1782K(3DG1782K)互补。
Features: High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782 |
 LZG |
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