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Datasheet 2SB1189 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SB1189 | Medium power transistor 2SB1189 / 2SB1238
Transistors
Medium power transistor (−80V, −0.7A)
2SB1189 / 2SB1238
!Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm)
2SB1189
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
!Absolute ma |
 ROHM Semiconductor |
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| 4 | 2SB1189 | (2SB889F / 2SB1189 / 2SB1238) Medium Power Transistor Transistors
2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F
(96-618-B13)
(96-750-D13)
278
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ROHM Semiconductor |
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| 3 | 2SB1189 | (2SBxxxx) MEDIUM POWER TRANSISTOR Transistors
2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F
(96-618-B13)
(96-750-D13)
278
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ROHM Semiconductor |
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| 2 | 2SB1189 | Medium Power Transistor SMD Type
Medium Power Transistor 2SB1189
Transistors
Features
High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction tem |
 Kexin |
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