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Datasheet 2SB1185 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SB1185 | SILICON PNP TRANSISTOR 2SB1185(3CA1185)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于功率放大。/Purpose: Power amplifier applications. 特点:VCE(sat)低，与 2SD1762(3DA1762)互补。
Features: Low VCE(sat),complementary pair with 2SD1762(3DA1762).
极限参数/Absolute maximum ratings(Ta=25� |
 LZG |
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| 6 | 2SB1185 | Silicon PNP transistor 2SB1185
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.
特征 / Features
VCE(sat)低，与 2SD1762 互补。 Low VCE(sat),complementary pair with 2SD1762.
用途 / Applications
用于功率 |
 BLUE ROCKET ELECTRONICS |
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| 5 | 2SB1185 | Power Transistor Power Transistor
FEATURES
z Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)
z Complements the 2SD1762.
Pb
Lead-free
Production specification
2SB1185
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Vo |
 Galaxy Microelectronics |
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| 4 | 2SB1185 | Power Transistor (-60V/ -3A) Transistors
Power Transistor (*60V, *3A)
2SB1184 / 2SB1243 / 2SB1185
FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm)
(96-128-B57)
223 |
 ROHM Semiconductor |
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