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Datasheet 2SB1182 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | 2SB1182 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1182
DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER |
Inchange Semiconductor |
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9 | 2SB1182 | Medium power Transistor Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor
Dimensions (Unit : mm)
2SB1182
6.5±0.2 5.1+−00..21
C0.5
2. |
ROHM Semiconductor |
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8 | 2SB1182 | Medium Power Transistor SMD Type
Medium Power Transistor 2SB1182
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat). Epitaxial planar type
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1 |
Kexin |
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7 | 2SB1182 | PNP PLASTIC ENCAPSULATE TRANSISTORS 2SB1182
PNP PLASTIC ENCAPSULATE TRA NSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage |
Weitron |
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Número de pieza | Descripción | Fabricantes | |
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