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Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling di
Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling di
SMD Type Silicon PNP Epitaxial Planar Type 2SB1175 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +
Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling d
SMD Type Silicon PNP Epitaxial Planar Type 2SB1174 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC. +0.2 9.70 -0.2 +0.15 0.50 -0.15 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7
Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching 7.0±0.3 Unit: mm 3.5±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabli
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