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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINN
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ un
UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base V
SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emi
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1712 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emi
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PartNumber.co.kr | 2020 | 연락처 |