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2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS
UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base V
Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2. COLLECTOR 2 3. EMITTER 3 V Operating and storage junctio
MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R PNP Silicon Epitaxial Transistors • • • Features Small Package Mounting:any pos
MCC Micro Commercial Components 2SB1182-P TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x • • Low Collector Saturation Voltage Execllent current-to-gain
MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R PNP Silicon Epitaxial Transistors • • • Features Small Package Mounting:any pos
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