2SB1150 전자부품 데이터시트

Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB1182PT CURRENT 2 Ampere FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .050 (1.27) .030 (0

WILLAS Low Frequency Transistor • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FM120-M+ 2SB1197KxLT1 THRU Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM1200-M+ Features Package ou

2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS

MCC Micro Commercial Components 2SB1182-P TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x • • Low Collector Saturation Voltage Execllent current-to-gain

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2. COLLECTOR 2 3. EMITTER 3 V Operating and storage junctio